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UNIVERSITY OF BUCHAREST
FACULTY OF PHYSICS Guest
2026-06-11 23:58 |
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Conference: Bucharest University Faculty of Physics 2026 Meeting
Section: Solid State Physics and Materials Science
Title:
Resonant Transport in a Double-channel Double-barrier Nanotransistor
Authors:
Andrei CONSTANTIN (1,2), Amanda-Teodora PREDA (1,2), George-Alexandru NEMNEȘ (1,2)
Affiliation:
1) Faculty of Physics, University of Bucharest, Atomistilor 405, Magurele-Ilfov 077125, Romania
2) Horia Hulubei National Institute for Physics and Nuclear Engineering, Reactorului 30, Magurele-Ilfov 077125, Romania
E-mail
andrei.constantin3@s.unibuc.ro
Keywords:
resonant tunneling, R-matrix method, Landauer-Büttiker formalism, nanotransistor, double-barrier structure
Abstract:
This work investigates a potential enhancement of the two-channel nanotransistor presented in Ref. [1], achieved by introducing an additional barrier and thereby forming a double-barrier double-channel nanotransistor. A rigorous comparative analysis is carried out using the R-matrix formalism and the Landauer–Büttiker formula, with the aim of identifying the geometrical configuration that yields optimal performance. The results are presented in terms of transmission-versus-energy characteristics. This shows characteristic resonant peaks, which fade out as the thickness of the barriers is increased,recovering the tunneling regime characteristic of the one-barrier device structure. Finally, the potential advantages of this structural modification are discussed.
References:
[1] Wulf, U., Preda, A. T., & Nemnes, G. A. (2024). Transport in a two-channel nanotransistor device with lateral resonant tunneling. Micromachines, 15(10), 1270. https://doi.org/10.3390/mi15101270
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